1/7 pplication specific discretes a.s.d.? THBT200S transient voltage suppressor for slic protection ? n dual bidirectional crowbar protection. n peak pulse current : -i pp = 75 a, 10/1000 m s. n holding current = 150 ma min n breakdown voltage = 200 v min. n breakover voltage = 290 v max. n monolithic device. features this monolithic protection device has been espe- cially designed to protect subscriber line cards.the thbt200 device is particularly suitable to protect ring generator relay against transient overvoltages. description august 2001- ed: 2 1 2 3 4 nc tip ring gnd schematic diagram ccitt k20 : 10/700 m s 1kv 5/310 m s 25a vde 0433 : 10/700 m s 2kv 5/310 m s 50a vde 0878 : 1.2/50 m s 1.5kv 1/20 m s 40a fcc part 68 : 2/10 m s 2.5kv 2/20 m s 225a (*) bellcore tr-nwt-001089 : 2/10 m s 2.5kv 2/10 m s 225a (*) 10/1000 m s 1kv 10/1000 m s 75a (*) (*) with series resistors or ptc. complies with the following standards : sip3 tm: asd is trademarks of stmicroelectronics.
THBT200S 2/7 symbol parameter value unit i pp peak pulse current (see note 1) 10/1000 m s 5/310 m s 8/20 m s 2/10 m s 75 125 150 225 a i tsm non repetitive surge peak on-state current (f = 50hz) tp = 20ms 30 a t stg t j storage temperature range maximum junction temperature -40to+150 150 c t l maximum lead temperature for soldering during 10s 230 c absolute maximum ratings (t amb =25c) symbol parameter value unit r th (j-a) junction to ambient 80 c/w thermal resistance note 1 : pulse waveform : 10/1000 m st r =10 m st p =1000 m s 5/310 m st r =5 m st p =310 m s 2/10 m st r =2 m st p =10 m s 100 50 %i pp t t r p 0 t
THBT200S 3/7 i pp i v i bo i h v rm v br v bo i rm symbol parameter v rm stand-off voltage i rm leakage current at v rm v br continuous reverse voltage v bo breakover voltage i h holding current i bo breakover current i pp peak pulse current c capacitance electrical characteristics (t amb = 25c). i rm @v rm v br @i r v bo @ i bo i h c max. min. max. min. max. min. max. note 1 note 2 note 3 m a v vmavmamamapf 10 180 200 1 290 150 800 150 200 note 1 : see reference test circuit 1 for i bo and v bo parameters. note 2 : see test circuit 2. note 3 :v r = 1v, f = 1mhz. parameters related to one trisil (between tip and gnd or ring and gnd)
THBT200S 4/7 reference test circuit 1 for i bo and v bo parameters : t functional holding current (i h ) test circuit 2. r -v p v bat = - 48 v surge generator d.u.t. test procedure : pulse test duration (tp = 20ms): - for bidirectional devices = switch k is closed - for unidirectional devices = switch k is open. v out selection - device with v bo < 200 volt -v out = 250 v rms ,r 1 = 140 w . - device with v bo ? 200 volt -v out = 480 v rms ,r 2 = 240 w . this is a go-nogo test which allows to confirm the holding current (i h ) level in a functional test circuit. test procedure : 1) adjust the current level at the i h value by short circuiting the ak of the d.u.t. 2) fire the d.u.t with a surge current : ipp = 10a , 10/1000 m s. 3) the d.u.t will come back off-state within 50 ms max.
THBT200S 5/7 functional description ring relay ring generator ptc ptc line a line b THBT200S -v slic t e s t r e l a y bat tip ring s thdtxxx or lcpxxx application circuit typical line card protection concept line a line b tip ring line a and line b protection. each line (tip and ring) is protected by a bidirectional trisil, which triggers at a maximum voltage equal to the v bo .
THBT200S 6/7 i h [t j ] i h [t j = 25?c ] 0 20406080100120140 0.0 0.2 0.4 0.6 0.8 1.0 t j (?c) fig. 1 : relative variation of holding current versus junction temperature. i (a) tsm t(s) 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3 0 10 20 30 40 f=50hz tj initial=25c fig. 2 : surge peak current versus overload dura- tion. fig. 3 : peak on state voltage versus peak on state current (typical values). 1 10 100 200 10 100 1000 fig. 4 : capacitance versus reverse applied volt- age (typical values).
THBT200S 7/7 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com package mechanical data sip3 plastic package types marking sip3 THBT200S THBT200S marking : ref. dimensions millimetres inches min. typ. max. min. typ. max. a 7.10 0.280 a1 2.80 0.110 a2 1.50 1.90 0.059 0.075 b 10.15 0.400 b1 0.50 0.020 b2 1.35 1.75 0.053 0.069 c1 0.38 0.50 0.015 0.020 e 2.54 0.100 e3 7.62 0.200 i 10.50 0.413 l 3.30 0.130 z 1.50 0.059 order code thbt 200 s bidirectional trisil breakdown voltage package: s = sip3 packaging: products supplied in antistatic tubes. weight: 0.55g b i e l b1 e 3 c1 a a2 a1 b2 z
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